This article is cited in 4 papers

Proceedings of the XIX All-Russian Conference on Physics of Ferroelectrics (VKS-XIX) (Moscow, Russia, June 19-23, 2011

Regular domain structures fabricated by an electron beam in stoichiometric LiNbO$_3$ crystals

L. S. Kokhanchik^a, M. N. Palatnikov^b, O. B. Shcherbina<sup>b

a</sup> Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Moscow oblast, 142432, Russia
^b Tananaev Institute of Chemistry and Technology of Rare Elements and Mineral Raw Materials Kola Science Centre of the Russian Academy of Sciences, Apatity, Murmansk oblast, 184209, Russia

Abstract: Electron beam writing of regular domain structures in $Z$-cuts 0.75 mm thick of stoichiometric and close to stoichiometric LiNbO$_3$ crystals has been carried out. Crystals have been grown by the Czochralski method from a melt with excess Li$_2$O (58.6 mol%) and from a congruent-composition melt in the presence of 6 wt% K$_2$O alkali solvent (flux). In both crystals, threshold charge doses required to form individual domains have been determined, and the optimal conditions of periodic structure patterning by sequential local irradiations have been found. Domain gratings of similar type (with periods of 6.5, 7, and 10 $\mu$m) are formed in both types of stoichiometric crystals.

 English version: Physics of the Solid State, 2012, 54:5, 962–964

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