This article is cited in 8 papers

Semiconductors

Influence of copper intercalation on the resistive state of compounds in the Cu–HfSe$_2$ system

V. G. Pleshchev^a, N. V. Selezneva^a, N. V. Baranov<sup>ab

a</sup> Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
^b Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg

Abstract: Polycrystalline samples of intercalated compounds Cu$_x$HfSe$_2$ have been synthesized for the first time and their electrical resistivity has been measured at both direct current and alternating current (with a frequency ranging from 200 Hz to 150 kHz) in the temperature range 80–300 K. It has been shown that the intercalation of copper atoms between three-layer Se–Hf–Se blocks leads to an increase in the electrical resistivity of the samples, as well as to a more pronounced activated character of the temperature dependence of the electrical resistivity. A time dependence of the electrical resistivity of the Cu$_x$HfSe$_2$ samples at room temperature, which is associated with the presence of copper ions in the sample, has been determined.

Received: 28.09.2011

 English version: Physics of the Solid State, 2012, 54:4, 716–721

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