This article is cited in 4 papers

Dielectrics

Large-scale potential fluctuations caused by SiO$_x$ compositional inhomogeneity

Yu. N. Novikov, V. A. Gritsenko

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The short-range order in amorphous SiO$_x$ (0 $\le x\le$ 2) films has been studied by high-resolution X-ray photoelectron spectroscopy. Both the random bonding and random mixture models do not describe experimental photoelectron spectra of SiO$_x$ ($x\le$ 2). An intermediate model of the SiO$_x$ structure has been proposed. The measured photoelectron spectra of the SiO$_x$ ($x\le$ 2) valence band indicate the presence of the silicon phase and silicon oxide.

Received: 20.07.2011

 English version: Physics of the Solid State, 2012, 54:3, 493–498

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