This article is cited in 4 papers

Semiconductors

Resonant and relaxation absorption of ultrasound by anisotropic Jahn-Teller centers in GaAs

K. A. Baryshnikov^a, N. S. Averkiev^a, A. M. Monakhov^a, V. V. Gudkov<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg

Abstract: The contribution of the Jahn-Teller effect to absorption of an ultrasonic wave by a GaAs crystal doped with copper has been investigated theoretically. The distinguishing feature of the problem under consideration is the existence of two holes in the state of the complex valence band. The magnitude of the tunneling splitting in Jahn-Teller centers has been determined. The theoretical values of the absorption coefficients for the resonant and relaxation types of absorption have been obtained. The magnitudes of these coefficients have been estimated.

Received: 05.09.2011

 English version: Physics of the Solid State, 2012, 54:3, 468–477

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