A. F. Orlov, L. A. Balagurov, I. V. Kulemanov, N. S. Perov, E. A. Gan'shina, A. S. Semisalova, A. D. Rubacheva, V. I. Zinenko, Yu. A. Agafonov, V. V. Saraikin, “Magnetic and magnetooptical properties of ferromagnetic semiconductor GaN : Cr”, Fizika Tverdogo Tela, 2012, Volume 54, Issue 2,Pages <nobr>267

This article is cited in 2 papers

Magnetism

Magnetic and magnetooptical properties of ferromagnetic semiconductor GaN : Cr

A. F. Orlov^a, L. A. Balagurov^a, I. V. Kulemanov^b, N. S. Perov^c, E. A. Gan'shina^c, A. S. Semisalova^c, A. D. Rubacheva^c, V. I. Zinenko^d, Yu. A. Agafonov^d, V. V. Saraikin^e

^a JSC "Giredmet" SRC RF, the Federal State Research and Design Institute of Rare Metal Industry, Moscow
^b National University of Science and Technology «MISIS», Moscow
^c Lomonosov Moscow State University
^d Institute of Microelectronics Technology and High-Purity Materials RAS
^e State Research Institute of Physical Problems

Abstract: Magnetic and magnetooptical properties of the Cr-doped GaN layers have been investigated in the temperature range 50–400 K. A high saturation magnetization of 25 G has been observed in the obtained material. Spectra of the magnetooptical transversal Kerr effect have revealed strong magnetic response in the energy range less than 3.0 eV due to the appearance of new spin-polarization states in the band gap of GaN upon Cr doping.

Received: 05.07.2011