This article is cited in 4 papers

Dielectrics

Kinetics of electron tunneling transfer in KH$_2$PO$_4$ and NH$_4$H$_2$PO$_4$ crystals with hydrogen bonds

I. N. Ogorodnikov, M. S. Kiseleva

Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg

Abstract: A model of electron transfer by tunneling between trapped electron and hole centers in crystals with hydrogen bonds under the conditions of thermostimulated mobility of one carrier type in the recombination process has been developed. The proposed model describes all features in the kinetics of induced optical density relaxation observed in nonlinear optical crystals of KH$_2$PO$_4$ (KDP) and NH$_4$H$_2$PO$_4$ (ADP) on a wide temporal scale (10$^{-8}$–10 s) under pulsed irradiation. The results of model calculations have been compared with experimental data on the photoinduced transient optical absorption (TOA) in KDP and ADP crystals in the visible and UV ranges. The nature of the radiation-induced defects, which account for the TOA, and the dependence of the TOA decay kinetics on the temperature, excitation power, and other experimental conditions have been considered.

Received: 19.07.2011

 English version: Physics of the Solid State, 2012, 54:2, 273–278

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