Abstract:
The problem of relaxation of the charge injected into a dielectric film has been analytically solved taking into account its conductivity and carrier trapping by both bulk and surface deep traps with fast (almost instantaneous) charging and finite discharge rates. The charge behavior in one-zone and two-zone relaxation modes has been analyzed. In particular cases, general analytical expressions give previously published results. Numerical calculations and an analysis of experimental data for titanium dioxide films deposited on metal substrates confirm the applicability of the developed model.