Surface physics, thin films

Depolarization currents in the BiFeO$_3$/TiO$_2$(Nt)Ti structure depending on the exposure time and the magnitude of the polarizing voltage

G. M. Gadjiev, Sh. M. Ramazanov, N. S. Abakarova, T. N. Efendieva

Daghestan Institute of Physics after Amirkhanov

Abstract: The behavior of depolarization currents in the BiFeO$_3$/TiO$_2$(Nt)Ti film structure after removing external voltage was studied as a function of the exposure duration (0–4 s) and voltage (30–55 V). An ambiguous relationship between the relaxation time and polarization time was established, caused by leakage currents and the processes of carrier trapping/emission to defect levels (oxygen vacancies) of the sample. Relaxation processes and leakage currents significantly determine the electrical properties of BiFeO$_3$-based memristor structures. Characteristic relaxation times and their relationship with the state of traps allow us to consider the depolarization current analysis technique as an effective tool for diagnosing the quality of films and assessing their operational limits.

Keywords: BiFeO$_3$, depolarization current, nanotubes, thin films, ferroelectric memristor.

Received: 15.09.2025
Revised: 07.11.2025
Accepted: 10.11.2025

DOI: 10.61011/FTT.2025.11.62141.252-25

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