Semiconductors

High-pressures relaxation effects in $n$-CdAs$_2$

L. A. Saypulaeva^a, A. V. Tebenkov^b, Sh. B. Abdulvagidov^a, A. G. Alibekov^a, S. F. Marenkin<sup>c

a</sup> Daghestan Institute of Physics after Amirkhanov
^b Institute of Natural Sciences and Mathematics, Ural Federal University
^c Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow

Abstract: Experimental studies of the baric dependences of the electrical and magnetoresistance of $n$-CdAs$_2$ at pressures up to 50 GPa and in magnetic fields up to 1 T are reported. High values of negative magnetoresistance (up to 8%) is shown to form with pressure. Relaxation effects caused by plastic deformation of materials are investigated. Within 25–35 GPa, a significant increase in the relaxation time of electrical resistance is observed, apparently due to an extended metastable states and structural transition type-I. The structural transformation is also reflected in the electronic subsystem, which leads to minima increasing with the magnetic field on the baric dependences of the magnetoresistance.

Keywords: high pressure, relaxation effects, electrical resistance, magnetic resistance, magnetic field, phase transitions.

Received: 25.09.2025
Revised: 27.09.2025
Accepted: 15.11.2025

DOI: 10.61011/FTT.2025.11.62129.118-25

Bibliographic databases:

•