Surface physics, thin films

Photoinduced changes in impedance and conductivity of CuInSe$_2$ films depending on their synthesis technology

O. B. Romanova^a, S. S. Aplesnin^ab, T. M. Gadzhiev^c, M. N. Sitnikov^b, M. А. Aliev^c, O. S. Nikitinsky^b, L. V. Udod<sup>ab

a</sup> L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
^b M. F. Reshetnev Siberian State University of Science and Technologies, Krasnoyarsk
^c Daghestan Institute of Physics after Amirkhanov

Abstract: Using the controlled selenization method, CuInSe$_2$ films with a chalcopyrite structure were synthesized. It was established that the selenization temperature $(T_{\mathrm{sel}})$ is a critical parameter determining the morphology and electrophysical properties of the films. A nonlinear volt-ampere characteristic was found, caused by the electrical inhomogeneity of the material. The optimum $T_{\mathrm{sel}}$ = 350$^\circ$C was determined, at which the maximum photoelectric effect and the longest relaxation time are observed. At $T_{\mathrm{sel}}<$ 300$^\circ$C, a photoinduced change in impedance was detected.

Keywords: polycrystalline films, electrophysical properties, photoconductivity.

Received: 24.10.2025
Revised: 24.10.2025
Accepted: 25.10.2025

DOI: 10.61011/FTT.2025.10.61978.295-25

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