Ferroelectricity

Reliability of MIS structures based on films of barium strontium titanate and hafnium oxide

M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, V. A. Luzanov, G. V. Chucheva

Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences

Abstract: Ferroelectric films of barium strontium titanate (BST) and hafnium oxide (HfO$_2$) were synthesized on silicon substrates by high-frequency sputtering and magnetron sputtering, respectively. The results of studies of the structural composition of BST and HfO$_2$ films and the electrophysical properties of metal-insulator-semiconductor (Ni-BST-Si) and (Ni-HfO$_2$-Si) MIS structures based on them are presented.

Keywords: ferroelectric films, barium strontium titanate (BST), hafnium oxide (HfO$_2$), metalinsulator-semiconductor (MIS) structures, electrophysical properties.

Received: 28.05.2025
Revised: 01.10.2025
Accepted: 02.10.2025

DOI: 10.61011/FTT.2025.10.61972.148-25

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