Abstract:
Conditions for the existence of a surface polariton at the semiconductor-dielectric interface have been analyzed. With allowance for the gyrotropy and the resonance frequency dispersion of the semiconductor, which manifests itself in an external magnetic field, the dispersion relation, the characteristic frequencies determining the existence region of a surface polariton, the wave fields, and the energy flux distribution in each of the interfacing media have been obtained. A numerical analysis of the influence of the external field and absorption, which lead to the manifestation of nonreciprocal properties of the polariton and to a substantial reconstruction of the spectrum, has been performed.