This article is cited in 8 papers

Semiconductors

Numerical simulation of the transport properties of indium antimonide

V. G. Orlov^ab, G. S. Sergeev<sup>a

a</sup> National Research Centre "Kurchatov Institute", Moscow
^b Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region, 141700, Russia

Abstract: A systematic investigation of the behavior of the transport coefficients of $n$-InSb over wide ranges of temperatures and concentrations of dopant atoms has been performed using the numerical solution of the Boltzmann transport equation. The thermoelectric characteristics of indium antimonide have been analyzed. The influence of different mechanisms of scattering of charge carriers on the transport coefficients and efficiency of thermoelectric energy conversion has been considered. The nature of the specific features of the temperature and concentration dependence of the transport and thermoelectric properties of $n$-InSb has been revealed.

Received: 25.03.2013

 English version: Physics of the Solid State, 2013, 55:11, 2215–2222

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