E. V. Lutsenko, N. V. Rzheutskii, V. N. Pavlovskii, G. P. Yablonskii, D. V. Nechaev, A. A. Sitnikova, V. V. Ratnikov, Ya. V. Kuznetsova, V. N. Zhmerik, S. V. Ivanov, “Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on <nobr>$c$</nobr>-sapphire substrates”, Fizika Tverdogo Tela, 2013, Volume 55, Issue 10,Pages <nobr>2058

This article is cited in 11 papers

Proceedings of the Third All-Russian Symposium "Semiconductor Lasers: Physics and Technology" St. Petersburg, Russia, November 13-16, 2012

Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on $c$-sapphire substrates

E. V. Lutsenko^a, N. V. Rzheutskii^a, V. N. Pavlovskii^a, G. P. Yablonskii^a, D. V. Nechaev^b, A. A. Sitnikova^b, V. V. Ratnikov^b, Ya. V. Kuznetsova^b, V. N. Zhmerik^b, S. V. Ivanov^b

^a Institute of Physics, National Academy of Sciences of Belarus, Minsk
^b Ioffe Institute, St. Petersburg

Abstract: This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to $\sim$80 mol% in barrier layers), which were grown by plasma assisted molecular beam epitaxy (PAMBE) on $c$-sapphire substrates. It has been demonstrated that the stimulated emission occurs in the mid-ultraviolet range of the spectrum at wavelengths of 259, 270, and 289 nm with threshold excitation power densities of 1500, 900, and 700 kW/cm$^2$, respectively. It has been shown that there exists a possibility of TE polarization $(\mathbf{E}\perp\mathbf{c})$ of both stimulated and spontaneous luminescence down to wavelengths of 259 nm.