P. V. Seredin, È. P. Domashevskaya, V. E. Ternovaya, I. N. Arsent'ev, D. A. Vinokurov, I. S. Tarasov, T. Prutskij, “Photoluminescence properties of heavily doped heterostructures based on (Al$_x$Ga$_{1-x}$As)$_{1-y}$Si$_y$ solid solutions”, Fizika Tverdogo Tela, 2013, Volume 55, Issue 10,Pages 2054

This article is cited in 10 papers

Proceedings of the Third All-Russian Symposium "Semiconductor Lasers: Physics and Technology" St. Petersburg, Russia, November 13-16, 2012

Photoluminescence properties of heavily doped heterostructures based on (Al$_x$Ga$_{1-x}$As)$_{1-y}$Si$_y$ solid solutions

P. V. Seredin^a, È. P. Domashevskaya^a, V. E. Ternovaya^a, I. N. Arsent'ev^b, D. A. Vinokurov^b, I. S. Tarasov^b, T. Prutskij^c

^a Voronezh State University
^b Ioffe Institute, St. Petersburg
^c Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, Puebla, Mexico

Abstract: It has been established that the photoluminescence spectra of heavily doped heterostructures based on (Al$_x$Ga$_{1-x}$As)$_{1-y}$Si$_y$ solid solutions exhibit quenching of the main exciton bands of Al$_x$Ga$_{1-x}$As ternary solid solutions and appearance of other maxima. The quenching of the main exciton bands can be associated both with the DX-center formation and with the change in the character of the band structure of (Al$_x$Ga$_{1-x}$As)$_{1-y}$Si$_y$ quaternary solid solutions.