P. V. Seredin, V. E. Ternovaya, A. V. Glotov, A. S. Len'shin, I. N. Arsent'ev, D. A. Vinokurov, I. S. Tarasov, H. Leiste, T. Prutskij, “X-ray diffraction studies of heterostructures based on solid solutions Al$_x$Ga$_{1-x}$As$_y$P$_{1-y}$ : Si”, Fizika Tverdogo Tela, 2013, Volume 55, Issue 10,Pages 2046

This article is cited in 16 papers

Proceedings of the Third All-Russian Symposium "Semiconductor Lasers: Physics and Technology" St. Petersburg, Russia, November 13-16, 2012

X-ray diffraction studies of heterostructures based on solid solutions Al$_x$Ga$_{1-x}$As$_y$P$_{1-y}$ : Si

P. V. Seredin^a, V. E. Ternovaya^a, A. V. Glotov^a, A. S. Len'shin^a, I. N. Arsent'ev^b, D. A. Vinokurov^b, I. S. Tarasov^b, H. Leiste^c, T. Prutskij^d

^a Voronezh State University
^b Ioffe Institute, St. Petersburg
^c Karlsruhe Nano Micro Facility, Eggenstein-Leopoldshafen, Germany
^d Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, Puebla, Mexico

Abstract: The growth of MOCVD-hydride epitaxial heterostructures based on ternary solid solutions Al$_x$Ga$_{1-x}$As heavily doped with phosphorus and silicon has been studied using high-resolution X-ray diffraction and X-ray microanalysis. The prepared epitaxial films are five-component solid solutions (As$_x$Ga$_{1-x}$As$_y$P$_{1-y}$)$_{1-z}$Si$_z$.