This article is cited in 1 paper

Proceedings of the Third All-Russian Symposium "Semiconductor Lasers: Physics and Technology" St. Petersburg, Russia, November 13-16, 2012

Domain structure of GaN/SiC-based materials for semiconductor lasers

M. E. Boiko, M. D. Sharkov, A. M. Boiko, S. I. Nesterov, S. G. Konnikov

Ioffe Institute, St. Petersburg

Abstract: The domain structure of GaN/SiC hexagonal semiconductor films has been studied using small-angle X-ray scattering in order to determine possible domain configurations in a GaN/SiC film that can influence the properties of the laser on its basis. Data on specific features of the samples, such as geometrical properties of clusters and the distances in superstructures (layers, superlattices), respectively, have been obtained by the processing of the small-angle X-ray scattering spectra according to Porod's and Bragg's models. A model of regular network of domain walls in GaN/SiC film has been proposed. The hypothesis on the formation of filamentary structures near the film-substrate interface has been confirmed.

 English version: Physics of the Solid State, 2013, 55:10, 2150–2153

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