This article is cited in 3 papers

Lattice dynamics

Role of adhesion in the metal-semiconductor phase transition in polycrystalline vanadium dioxide films

V. N. Andreev, V. A. Klimov, M. E. Kompan

Ioffe Institute, St. Petersburg

Abstract: Etching of thin polycrystalline films of vanadium dioxide with hydrofluoric acid vapor has offered a possibility to reveal a significant influence of the extent of adhesion on the temperature position and shape of the hysteresis loop of the reflectivity. It has been established that, in the cases where silicon is used as a substrate, etching at room temperature is accompanied by incorporation of hydrogen into thin films of vanadium dioxide.

Received: 21.03.2013

 English version: Physics of the Solid State, 2013, 55:10, 2097–2101

Bibliographic databases:

•