This article is cited in 13 papers

Semiconductors

Resonance Bragg structure with double InGaN quantum wells

A. S. Bolshakov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, V. V. Lundin, A. F. Tsatsul'nikov, M. A. Yagovkina

Ioffe Institute, St. Petersburg

Abstract: The effect of exciton-polariton resonance on the optical properties of periodic heterostructures with double InGaN quantum wells in a GaN matrix has been studied. It has been found that the light reflection is amplified at the frequency corresponding to the exciton energy when it coincides with the frequency of the Bragg resonance. This effect is observed to be twice as large as that in a similar system of single quantum wells.

Received: 18.02.2013

 English version: Physics of the Solid State, 2013, 55:9, 1817–1820

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