Semiconductors

Growth specifics of GaAs nanowires in mesa

I. P. Sotnikov^abc, V. A. Petrov^a, G. È. Cirlin^abc, Yu. B. Samsonenko^abc, A. D. Bouravlev^ab, Yu. M. Zadiranov^b, N. D. Il'inskaya^b, S. I. Troshkov<sup>b

a</sup> St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Ioffe Institute, St. Petersburg
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg

Abstract: The possibility of epitaxial growth of nanowire arrays on tilted faces of linear mesa has been demonstrated. The structural properties of GaAs nanowires grown on $(33\bar 1)$, $(11\bar 7)$, and (113) faces of samples with the (100) crystallographic orientation of the substrate have been studied. It has been found that there is a relation between the structural parameters of nanowires and the geometric orientation of the growth surface relative to the $\langle$111$\rangle$ directions and the surface of the substrate.

Received: 27.09.2012

 English version: Physics of the Solid State, 2013, 55:4, 702–706

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