This article is cited in 3 papers

Surface physics, thin films

Tunneling characteristics of a double-barrier magnetic junction

N. Kh. Useinov

Kazan (Volga Region) Federal University

Abstract: The spin-polarized current through a planar double-barrier magnetic tunnel junction has been calculated using the quasi-classical model. The coefficients of electron transmission through the barriers have been calculated in terms of the quantum theory. The dependences of the transmission coefficients, spinpolarized currents, and tunneling magnetoresistance on the applied voltage under resonant conditions have been shown. Under non-resonant conditions, the tunneling magnetoresistance has been compared with the experimental data.

Received: 07.08.2012

 English version: Physics of the Solid State, 2013, 55:3, 659–667

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