This article is cited in 2 papers

Semiconductors

Localization of carbon atoms and extended defects in silicon implanted separately with C$^+$ and B$^+$ ions and jointly with C$^+$ and B$^+$ ions

M. Jadan^a, A. R. Chelyadinskii^b, V. B. Odzaev<sup>b

a</sup> Tafila Technical University, Tafila, Jordan
^b Belarusian State University, Minsk

Abstract: The possibility to control the localization of implanted carbon in sites and interstices in silicon immediately during the implantation has been demonstrated. The formation of residual extended defects in silicon implanted separately with C$^+$ and B$^+$ ions and jointly with C$^+$ and B$^+$ ions has been shown. It has been found that the formation of residual defects can be suppressed due to annihilation of point defects at C atoms (the Watkins effect). The positive effect is attained if implanted carbon is localized over lattice sites, which is provided by its implantation with the effective current density of the scanning ion beam no lower than 1.0 $\mu$A cm$^{-2}$.

Received: 18.06.2012

 English version: Physics of the Solid State, 2013, 55:2, 278–281

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