This article is cited in 1 paper

Surface physics, thin films

Molecular dynamics simulation of the heteroepitaxial growth of Cu–Pd solid solution films on Pd(001)

A. S. Prizhimov^a, V. M. Ievlev^a, A. V. Evteev<sup>b

a</sup> Voronezh State University
^b The University of Newcastle, Callaghan, Australia

Abstract: The specific features of the heteroepitaxial growth of Cu–Pd solid solution films on the (001) surface of a Pd crystal at temperatures of 600 and 1000 K have been investigated using the molecular dynamics simulation. The condensation from a two-component flow has been simulated by a sequential deposition of Cu and Pd atoms with concentrations of 60 at% Cu and 40 at% Pd by portions of 0.1 ML, which corresponds to an effective deposition rate of $\sim$3.3 $\times$ 10$^9$ ML/s. It has been established that there is a coherent conjugation of the crystal lattices of the film and the substrate. The growth is accompanied by the formation of an intermediate solid solution monolayer phase: the phase is formed in the first layer of the film at a temperature of 600 K and in the upper layer of the substrate at 1000 K.

Received: 05.06.2012

 English version: Physics of the Solid State, 2013, 55:1, 213–219

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