Solid State Theory Conference, St. Petersburg, May 14-16, 2025

Theory of flash memory based on a two-dimensional Wigner cluster

M. M. Makhmudian^ab, M. M. Makhmudian^ab, M. V. Èntin<sup>a

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: Modern flash memory operates through the confinement (trapping) of electrons at defect sites within a dielectric layer, which modulates the resistance of a two-dimensional semiconductor channel. In this work, we numerically investigate structural ordering-specifically, Wigner crystallization-of localized electrons in deep trapping sites. The angular distribution function of these electrons confirms their Wigner localization.

Keywords: Wigner cluster, flash memory, localized electrons, angular distribution function.

Received: 30.06.2025
Revised: 13.08.2025
Accepted: 15.08.2025

DOI: 10.61011/FTT.2025.09.61635.3-25

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