Semiconductors

Effect of Ge nanolayers and quantum dots on photoluminescence properties of GeSiSn/Si heterostructures

D. V. Kolyada^a, D. D. Firsov^a, O. S. Komkov^a, I. V. Skvortsov^b, V. I. Mashanov^b, I. D. Loshkarev^b, V. A. Timofeev<sup>b

a</sup> Saint Petersburg Electrotechnical University "LETI"
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: Heterostructures with multiple GeSiSn/Si quantum wells including thin germanium layers, as well as with germanium quantum dots placed on top of the quantum wells, are studied. The heterostructures were grown by molecular beam epitaxy on silicon substrates. Structural studies using the X-ray diffraction method confirmed the elastically stressed state of the layers. Photoluminescence spectroscopy revealed that an increase in the germanium layer thickness leads to a red shift in the emission peak of multiple quantum wells, while the experimental values of the transition energies correlate well with theoretical calculations. The use of germanium quantum dots grown on top of GeSiSn/Si quantum wells enables a further long-wavelength shift of the emission. The obtained results demonstrate the efficiency of fine-tuning the energy spectrum of GeSiSn/Si heterostructures by varying the parameters of Ge layers, and open up prospects for the development of highly efficient infrared emitting devices.

Keywords: multiple quantum wells, Fourier transform infrared spectroscopy, quantum dots, germanium nanolayers, molecular beam epitaxy, X-ray diffraction.

Received: 11.08.2025
Revised: 02.09.2025
Accepted: 07.09.2025

DOI: 10.61011/FTT.2025.09.61615.228-25

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