This article is cited in 6 papers

Semiconductors

Effect of interband scattering on kinetic coefficients and estimates of the parameters of the band spectrum of Sb$_2$Te$_3$

S. A. Nemov^abc, N. M. Blagikh^d, L. D. Ivanova<sup>e

a</sup> Peter the Great St. Petersburg Polytechnic University
^b Zabaikalsky State University, Chita
^c Saint Petersburg Electrotechnical University "LETI"
^d LLC "Atlantis", St. Petersburg, 191024, Russia
^e Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences, Moscow

Abstract: It has been shown that uncertainties in the interpretation of experimental data on transport phenomena in Sb$_2$Te$_3$ are resolved in the two-band model with the consistent inclusion of the interband hole scattering. The performed calculation is in quantitative agreement with the experimental data in the temperature range from 77 to 400 K for the following parameters of the band spectrum: the effective mass of the density of states of light holes $m_{d1}\approx0.6 m_0$ (where $m_0$ is the free electron mass), the effective mass of the density of states of heavy holes $m_{d2}\approx1.8 m_0$, and the energy gap between nonequivalent extrema of the valence band $\Delta E_v(T)\approx$ 0.15–2.5 $\times$ 10$^{-4}$ T eV.

Received: 06.03.2014

 English version: Physics of the Solid State, 2014, 56:9, 1754–1760

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