This article is cited in 3 papers

Surface physics, thin films

Kinetics of oxidation of subsurface layers of $^{29}$Si-enriched silicon in a magnetic field

O. V. Koplak^ab, A. I. Dmitriev^a, R. B. Morgunov<sup>a

a</sup> Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia
^b National Taras Shevchenko University of Kyiv

Abstract: It has been found that, in a magnetic field of $\sim$ 0.1 T, the kinetics of oxidation of the silicon surface has a different behavior. The rate of formation of SiO$_x$ complexes containing $^{29}$Si nuclei with spin 1/2 (72.76%) at the initial stage of oxidation is two times higher than the rate of reaction involving complexes containing $^{28}$Si and $^{30}$ nuclei with zero spins.

Received: 23.12.2013

 English version: Physics of the Solid State, 2014, 56:7, 1443–1448

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