This article is cited in 18 papers

Semiconductors

Dielectric and electrical properties of polymorphic bismuth pyrostannate Bi$_2$Sn$_2$O$_7$

L. V. Udod^ab, S. S. Aplesnin^ab, M. N. Sitnikov^a, M. S. Molokeev<sup>b

a</sup> M. F. Reshetnev Siberian State Aerospace University,
^b L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk

Abstract: The Bi$_2$Sn$_2$O$_7$ compound existing simultaneously in two polymorphic modifications, namely, orthorhombic and cubic, has been synthesized for the first time by solid-phase synthesis. The dielectric and electrical properties of the compound have been studied in the temperature range 100 K $< T <$ 500 K. Anomalies in the temperature dependences of the electrical resistivity and the permittivity (imaginary and real parts) have been found at both low and high temperatures. These features are explained in terms of the model of martensitic phase transitions.

Received: 16.01.2014

 English version: Physics of the Solid State, 2014, 56:7, 1315–1319

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