This article is cited in 4 papers

Semiconductors

Influence of thermal treatment on the microstructure and electrical and optical properties of SnS thin films

S. A. Bashkirov^ab, P. P. Gladyshev^a, V. F. Gremenok^b, V. A. Ivanov<sup>b

a</sup> Dubna International University for Nature, Society, and Man
^b Scientific-Practical Materials Research Centre of NAS of Belarus

Abstract: The influence of thermal treatment on the microstructure and electrical and optical properties of SnS films obtained by the “hot-wall” method has been investigated. It has been established that the thermal treatment does not lead to the formation of foreign phases in the film composition. The average film roughness after the thermal treatment increases from 10 to 20 nm. Resistivity after the thermal treatment decreases from 230 to 100 $\Omega$ cm ($T$ = 300 K), while the temperature coefficient of thermopower increases from 40 to 330 $\mu$V K$^{-1}$. The band gap is 1.46 eV. The adsorption edge is not displaced after the thermal treatment.

Received: 16.01.2014

 English version: Physics of the Solid State, 2014, 56:7, 1310–1314

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