This article is cited in 1 paper

Surface physics, thin films

Oxidation of the porous silicon surface under the action of a pulsed ionic beam: XPS and XANES studies

V. V. Bolotov, K. E. Ivlev, P. M. Korusenko, S. N. Nesov, S. N. Povoroznyuk

Omsk Scientific Center, Siberian Branch of the Russian Academy of Sciences

Abstract: The changes in the electronic structure and phase composition of porous silicon under action of pulsed ionic beams have been studied by X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy (XANES) using synchrotron radiation. The Si 2$p$ and O 1$s$ core photoemission spectra for different photoelectron collection angles, valence band photoemission spectra, and X-ray absorption near-edge fine structure spectrain the region of Si $L_{2,3}$ edges of the initial and irradiated samples have been analyzed. It has been found that, as a result of the irradiation, a thin oxide film consisting predominantly of higher oxide SiO2 is formed on the porous silicon surface, which increases the energy gap of the silicon oxide. Such film exhibits passivation properties preventing the degradation of the composition and properties of porous silicon in contact with the environment.

Received: 16.12.2013

 English version: Physics of the Solid State, 2014, 56:6, 1256–1260

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