Abstract:
A method has been developed for calculating yield stresses in doped crystals and solid solutions with inclusion of the static and dynamic aging of dislocations. An analytical description of the kinetics of deformation of these materials in the vicinity of the upper yield stress has been proposed. The stage character of stress-strain curves due to the dislocation immobilization by impurity atmospheres formed around dislocations has been demonstrated. The theory is applicable to the calculation of the impurity and solid solution hardening of semiconductors, metals with body-centered cubic (bcc) structure, intermetallic compounds, and other materials.