This article is cited in 3 papers

Semiconductors

Dielectric properties and charge transfer in (TlInSe$_2$)$_{0.1}$(TlGaTe$_2$)$_{0.9}$ for the DC and AC current

S. N. Mustafaeva^a, M. M. Asadov^b, A. I. Dzhabbarov<sup>a

a</sup> Institute of Physics Azerbaijan Academy of Sciences
^b Institute of Chemical Problems, Baku

Abstract: The experimental results of studying the temperature and frequency dependences of dc and ac conductivity as well as the dispersion of dielectric coefficients of the grown single crystals of the (TlInSe$_2$)$_{0.1}$(TlGaTe$_2$)$_{0.9}$ solid solution are presented. The nature of dielectric losses and the hopping charge transfer mechanism have been established, and parameters of localized states, such as the density of states near the Fermi level and their spread, the average time and the hopping length of charge carriers, and the concentration of deep traps responsible for dc and ac conductivity, have been evaluated.

Received: 18.12.2013

 English version: Physics of the Solid State, 2014, 56:6, 1096–1100

Bibliographic databases:

•