This article is cited in 1 paper

Low dimensional systems

Solid-phase synthesis of manganese silicides on the Si(100)2 $\times$ 1 surface

S. N. Varnakov^ab, M. V. Gomoyunova^c, G. S. Grebenyuk^c, V. N. Zabluda^a, S. G. Ovchinnikov^a, I. I. Pronin<sup>c

a</sup> L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
^b M. F. Reshetnev Siberian State Aerospace University,
^c Ioffe Institute, St. Petersburg

Abstract: The solid-phase synthesis of manganese silicides on the Si(100)2 $\times$ 1 surface coated at room temperature by a 2-nm-thick manganese film has been investigated using high-energy-resolution photoelectron spectroscopy with synchrotron radiation. The dynamics of variation of the phase composition and electronic structure of the near-surface region with increasing sample annealing temperature to 600$^\circ$C, has been revealed. It has been shown that, under these conditions, a solid solution of silicon in manganese, metallic manganese monosilicide MnSi, and semiconductor silicide MnSi$_{1.7}$ are successively formed on the silicon surface. The films of both silicides are not continuous, with the fraction of the substrate surface occupied by them decreasing with increasing annealing temperature. The binding energies of the Si 2$p$ and Mn 3$p$ electrons in the compounds synthesized have been determined.

Received: 07.10.2013

 English version: Physics of the Solid State, 2014, 56:4, 812–815

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