This article is cited in 8 papers

Mechanical properties, strength physics and plasticity

Dependence of the critical radius of partial dislocation loops on the stacking fault energy in semiconductors

Yu. Yu. Loginov^a, A. V. Mozzherin^b, A. V. Bril'kov<sup>b

a</sup> M. F. Reshetnev Siberian State University of Science and Technologies, Krasnoyarsk
^b Siberian Federal University, Krasnoyarsk

Abstract: The dislocation loop size distribution in semiconductors CdTe, ZnTe, ZnSe, ZnS, CdS, GaAs, Si, and Ge has been studied using transmission electron microscopy. The experimental results have been compared with theoretical computations of the critical radii of the transition of partial dislocation loops to full ones with allowance for the dislocation loop formation energy and stacking fault energy of the materials. It has been shown that the critical radius depends on the stacking fault energy and is an important characteristic in the analysis of the defect formation processes in semiconductors.

Received: 15.07.2013

 English version: Physics of the Solid State, 2014, 56:4, 720–722

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