Abstract:
The temperature dependences of the mobility of nondegenerate two-dimensional electrons in scattering by a correlated distribution of impurity ions in Al$_x$Ga$_{1-x}$As/GaAs heterostructures have been investigated. The cases where the influence of the first maximum of the structure factor on the scattering of electrons begins to dominate with increasing temperature have been considered. It has been found that the mobility of two-dimensional electrons decreases with increasing correlations in the spatial distribution of impurity ions. The influence exerted by the correlations and the width of the spacer layer on this effect has been analyzed.
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