This article is cited in 5 papers

Low dimensional systems

Initial growth stages of manganese films on the Si(100)2 $\times$ 1 surface

S. N. Varnakov^ab, M. V. Gomoyunova^c, G. S. Grebenyuk^c, V. N. Zabluda^a, S. G. Ovchinnikov^a, I. I. Pronin<sup>c

a</sup> L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
^b M. F. Reshetnev Siberian State Aerospace University,
^c Ioffe Institute, St. Petersburg

Abstract: Initial growth stages of manganese films on the Si(100)2 $\times$ 1 surface at room temperature have been investigated using high-energy-resolution photoelectron spectroscopy, and the dynamics of the variation in their phase composition and electronic structure with the coverage growth has been revealed. It has been shown that the interfacial manganese silicide and the film of the solid solution of silicon in manganese are sequentially formed under these conditions on the silicon surface. The growth of the metal manganese film starts after the deposition of $\sim$ 0.9 nm Mn. Segregation of silicon on the film surface is observed in the range of coverages up to 1.6 nm Mn.

Received: 28.05.2013

 English version: Physics of the Solid State, 2014, 56:2, 380–384

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