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JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2014 Volume 56, Issue 2, Pages 331–336 (Mi ftt11898)

This article is cited in 8 papers

Impurity centers

Photo-induced current transient spectroscopy of the ferroelectric-semiconductor TlGaSe$_2$

A. P. Odrinsky

Institute of Technical Acoustics, Academy of Sciences of Belarus, Vitebsk

Abstract: Systematic studies of crystals from different technological batches have revealed five electrically active defects with a charge exchange thermal activation energy of 0.1–0.7 eV. Specific features of their detection, which are associated with the ferroelectric properties of the material, have been discussed. The pattern revealed in the variation with temperature of the charge exchange enthalpy of the defect detected in the vicinity of the phase transition has been presented.

Received: 27.02.2013
Accepted: 02.07.2013


 English version:
Physics of the Solid State, 2013, 56:2, 335–340

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