This article is cited in 3 papers

Semiconductors

Modification of the dielectric properties of copper-doped CdIn$_2$S$_4$ single crystal

S. N. Mustafaeva^a, M. M. Asadov^b, J. T. Guseinov<sup>a

a</sup> Institute of Physics Azerbaijan Academy of Sciences
^b Institute of Chemical Problems, Baku

Abstract: The study of the dielectric properties of a CdIn$_2$S$_4$ $\langle$3 mol% Cu$\rangle$ single crystal in alternating-current (ac) electric fields with frequencies $f$ = 5 $\times$ 10$^4$ – 3.5 $\times$ 10$^7$ Hz has revealed the origin of dielectric loss (relaxation loss that is changed by the through current loss at high frequencies). It has been found that CdIn$_2$S$_4$ $\langle$Cu$\rangle$ has permittivity increment $\Delta\varepsilon'$ = 123, relaxation frequency $f_r$ = 2.3 $\times$ 10$^4$ Hz, and relaxation time $\tau$ = 43 $\mu$s. The doping of CdIn$_2$S$_4$ single crystal with copper (3 mol%) is established to substantially increase the permittivity $(\varepsilon')$, dielectric loss tangent $(\tan\delta)$, and ac conductivity $(\sigma_{\mathrm{ac}})$. In this case, the frequency dispersion of $\varepsilon'$ and $\tan\delta$ increases and that of $\sigma_{\mathrm{ac}}$ decreases.

Received: 13.05.2013
Accepted: 14.06.2013

 English version: Physics of the Solid State, 2014, 56:2, 279–281

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