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Semiconductors
Thermoelectric properties of $n$-Bi$_2$Te$_{3-x-y}$Se$_x$S$_y$ solid solutions under high pressure
I. Korobeynikova,
L. N. Luk'yanovab,
G. V. Vorontsova,
V. V. Shchennikova,
V. A. Kutacovb a Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg
b Ioffe Institute, St. Petersburg
Abstract:
The thermoelectric properties of
$n$-Bi
$_2$Te
$_{3-x-y}$Se
$_x$S
$_y$ solid solutions with atomic substitutions in the tellurium sublattice (
$x$ = 0.27, 0.3,
$y$ = 0, and
$x$ =
$y$ = 0.09) have been studied under a pressure to 8 GPa. It has been found that the Seebeck coefficient and the resistance decrease with increasing
$P$, and power factor
$\chi$ increases in all compositions and becomes maximal at pressures of 2–4 GPa. It has been shown that the power factor
$\chi$, which is proportional to the product of the effective mass of the density of states
$m/m_0$ and the charge carrier mobility
$\mu_0$ in the form
$(m/m_0)^{3/2}\mu_0$, increases with increasing pressure mainly due to the increase in the mobility and also depends on the solid solution composition. In the composition with substitution Te
$\to$ Se + S (
$x$ =
$y$ = 0.09), the peculiarity of the dependence of
$m/m_0$ on
$P$ in the pressure range corresponding to maximal values of the power factor can be explained by the existence of an electronic topological transition. The increase in the power factor under pressure in
$n$-type Bi
$_2$Te
$_{3-x-y}$Se
$_x$S
$_y$ solid solutions combined with similar data for
$p$-type Bi
$_{2-x}$Sb
$_x$Te
$_3$ solid solutions obtained earlier, including the estimations of possible changes in the thermal conductivity with increasing pressure, give grounds to design thermoelements with improved value of the thermoelectric figure-of-merit, which can be 50–70% at pressures of 2–4 GPa.
Received: 01.07.2013
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