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Fizika Tverdogo Tela, 2014 Volume 56, Issue 2, Pages 209–223 (Mi ftt11880)

This article is cited in 126 papers

Reviews

Electronic structure of silicon dioxide (a review)

S. S. Nekrashevich, V. A. Gritsenko

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: Silicon dioxide amorphous films are the key insulators in silicon integrated circuits. The physical properties of silicon dioxide are determined by the electronic structure of this material. The currently available information on the electronic structure of silicon dioxide has been systematized.

Received: 03.07.2013


 English version:
Physics of the Solid State, 2014, 56:2, 207–222

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