Magnetism, spintronics

Modification of the electronic structure of the magnetic semiconductor surface with a strong Rashba effect caused by the presence of domain walls

V. N. Men'shov^abc, I. P. Rusinov^ab, E. V. Chulkov<sup>b

a</sup> P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Saint Petersburg State University
^c National Research Centre "Kurchatov Institute", Moscow

Abstract: In this paper, we theoretically study how electron scattering on domain walls modifies the surface electronic structure of a magnetic semiconductor with a strong Rashba effect. It is shown that a smooth boundary between domains with opposite magnetization perpendicular to the surface induces the appearance of three different types of one-dimensional electronic states. A bound state is formed below the continuum of two-dimensional states. A resonant state with a quasi-linear spectrum and resonant states with a parabolic dispersion arise within the local energy exchange gap. The origin of the resonant states is related to the nontrivial Berry curvature due to the inversion symmetry breaking on/at the surface. The spectral characteristics and spin polarization of these states are described as a function of the Rashba splitting strength, the magnetization amplitude in the domains and the width of the boundary between them. The possible manifestation of the resonant states in magnetotransport experiments, for example, on the surface of the BiTeI polar semiconductor doped with transition metal atoms is discussed.

Keywords: Rashba effect, magnetic domain wall, exchange gap, resonant state.

Received: 01.07.2025
Revised: 14.07.2025
Accepted: 14.07.2025

DOI: 10.61011/FTT.2025.08.61320.173-25

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