Semiconductors

Short-range impurity center in a monolayer of transition metal dichalcogenides

R. Z. Vitlina, L. I. Magarill, A. V. Chaplik

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: Electronic characteristics of a short-range impurity center in a monolayer of transition metal dichalcogenides (TMDC) are theoretically investigated. The bound states energy, electron scattering cross-section and photoionization probability are found. The valley selectivity coefficient for the impurity-to-band transitions is calculated.

Keywords: transition metal dichalcogenides, short-range impurity, transport cross-section, photoionization.

Received: 23.07.2025
Revised: 24.07.2025
Accepted: 24.07.2025

DOI: 10.61011/FTT.2025.08.61314.210-25

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