Semiconductors

Nano-electromagnets based on hybrid SiC/Si nanostructures

N. T. Bagraev^a, L. E. Klyachkin^a, A. M. Malyarenko^a, A. V. Osipov^b, S. A. Kukushkin<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg

Abstract: Possible ways of obtaining electromagnets using electromagnetic induction on the surface of silicon carbide nanostructures containing silicon vacancies and grown on the surface of monocrystalline silicon by the method of coordinated atomic substitution are considered. The electrical characteristics of boron structures made within the framework of the Hall geometry are investigated, depending on the magnitude of the longitudinal source-drain current, during the transmission of which a magnetic field perpendicular to the plane of the structure is induced. This field determines the characteristics of dissipative transport of single carriers in the edge channels of the nanostructure, which are analyzed using the results of conductivity measurements depending on the magnitude of the magnetic current through the area of the edge channel.

Keywords: nanomagnets, magnetic susceptibility, silicon carbide on silicon, silicon vacancies, nanostructures.

Received: 14.07.2025
Revised: 23.07.2025
Accepted: 26.07.2025

DOI: 10.61011/FTT.2025.08.61313.196-25

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