XXIX International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2025
Semiconductors

Magnetic properties of submicron $\alpha$-Fe$_2$O$_3$ layers grown on sapphire by mist-CVD

P. V. Kharitonskii^a, V. I. Nikolaev^a, R. B. Timashov^a, A. I. Stepanov^a, M. P. Scheglov^a, K. G. Gareev^ab, A. Yu. Ralin^c, E. S. Sergienko<sup>ad

a</sup> Ioffe Institute, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"
^c Far Eastern Federal University, Vladivostok
^d Saint Petersburg State University

Abstract: Magnetic properties of submicron iron (III) oxide layers deposited by mist-CVD epitaxy on a sapphire substrate of basal orientation (0001) with and without a 2H-GaN buffer layer were studied. It was shown that both layers are close in composition to $\alpha$-Fe$_2$O$_3$ (hematite). The presence of the GaN buffer layer leads to an increase in the saturation magnetization and saturation remanence. Magnetometry and magnetic force microscopy data allowed theoretical estimates to be made indicating the presence of vortex magnetic structures in the studied layers.

Keywords: iron oxide, hematite, maghemite, gallium nitride, submicron layers, sapphire, mist-CVD, magnetic hysteresis, magnetic states, vortex structures.

Received: 06.03.2025
Revised: 06.03.2025
Accepted: 05.05.2025

DOI: 10.61011/FTT.2025.07.61185.23HH-25

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