This article is cited in 5 papers

Semiconductors

Electrical resistivity and Hall effect in lanthanum monobismuthide in magnetic fields to 13 T

N. N. Stepanov^a, N. V. Morozova^b, A. E. Kar'kin^b, A. V. Golubkov^a, V. V. Kaminskii<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg

Abstract: The electrical resistivity, the Hall effect, the free charge carrier mobility, and their field dependences have been studied in lanthanum monobismuthide (LaBi) over the temperature range of 1.7–300 K in magnetic fields to 13 T. For comparison, similar measurements have been performed on samples of lanthanum monotelluride (LaTe). It has been shown that LaBi is a semiconducting material with a complex structure of the conduction band.

Received: 14.05.2015

 English version: Physics of the Solid State, 2015, 57:12, 2369–2372

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