This article is cited in 1 paper

Semiconductors

Frequency dispersion of the dielectric coefficients and conductivity of Tl$_6$SI$_4$ crystals

S. N. Mustafaeva^a, D. M. Babanly^b, M. M. Asadov^b, D. B. Tagiev<sup>b

a</sup> Institute of Physics Azerbaijan Academy of Sciences
^b Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku

Abstract: The experimental results on the frequency dependences of the dielectric characteristics and conductivity of the grown Tl$_6$SI$_4$ crystals have allowed revealing the nature of the dielectric losses and the hopping mechanism of charge transfer, estimating the parameters of localized states in the band gap, including the density of states near the Fermi level and their energy scatter, the average hopping time, the average hopping length, and the density of deep traps responsible for the alternating-current (ac) conductivity.

Received: 15.04.2015

 English version: Physics of the Solid State, 2015, 57:10, 1963–1965

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