This article is cited in 4 papers

Surface physics, thin films

Topology of an anodically formed oxide film on a silicon single crystal

A. M. Orlov, I. O. Yavtushenko, M. Yu. Makhmud-Akhunov

Ulyanovsk State University

Abstract: The results of investigations of the morphological properties of an oxide film formed on single-crystal silicon by anodic oxidation in distilled water in the potential-controlled mode have been presented. It has been established that the oxide film is always formed in the form of separate islands, the shape of which depends on the substrate orientation irrespective of the applied potential.

Received: 15.12.2014

 English version: Physics of the Solid State, 2015, 57:8, 1653–1658

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