This article is cited in 3 papers

Phase transitions

Semiconductor–metal phase transition in LaBi under high pressure

N. N. Stepanov^a, N. V. Morozova^b, A. E. Kar'kin^b, I. Korobeynikov^b, A. V. Golubkov^a, V. V. Kaminskii<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg

Abstract: The effect of pressure up to 22 GPa on the electrical resistance and thermopower of lanthanum monobismuthide at room temperature has been studied. A semiconductor–metal phase transition in the pressure range of 4–6 GPa has been revealed from the change in the sign of thermopower and the thermal dependence of the electrical resistance of LaBi. The observed inflections in the pressure dependences of the thermopower and electrical resistance of LaBi samples in the pressure range of 8–11 GPa can be ascribed to the structural phase transition from the B1 phase to the PT and B2 phases.

Received: 24.02.2015

 English version: Physics of the Solid State, 2015, 57:8, 1639–1641

Bibliographic databases:

•