This article is cited in 13 papers

Ferroelectricity

Growth kinetics of induced domains in Ba$_{0.8}$Sr$_{0.2}$TiO$_3$ ferroelectric thin films

D. A. Kiselev^ab, M. S. Afanasiev^b, S. A. Levashov^b, G. V. Chucheva<sup>b

a</sup> National University of Science and Technology «MISIS», Moscow
^b Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences

Abstract: The possibility of the formation of stable domain states in Ba$_{0.8}$Sr$_{0.2}$TiO$_3$ films on the initial surface and in a preliminarily polarized region of the film has been demonstrated using piezoresponse force microscopy. The velocity of lateral motion of a domain wall, coercive field, minimal domain size, and recording time for the domain formation under the applied voltage have been calculated.

Received: 15.12.2014

 English version: Physics of the Solid State, 2015, 57:6, 1151–1154

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