This article is cited in 5 papers

Semiconductors

Dielectric properties of the CuInS$_2$ single crystal in radio-frequency electric fields

S. N. Mustafaeva^a, M. M. Asadov^b, J. T. Guseinov^a, I. Kasymoglu<sup>a

a</sup> Institute of Physics Azerbaijan Academy of Sciences
^b Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku

Abstract: The presented experimental results of the investigation of the frequency dependence of the dielectric functions and electrical conductivity of grown CuInS$_2$ single crystals have revealed the relaxation character of the dispersion, the nature of dielectric losses, and the hopping mechanism of charge transfer and have allowed estimating the parameters of localized states, including the density of states near the Fermi level and their energy range, the average hopping time and distance, as well as the density of deep traps responsible for the alternating-current conductivity.

Received: 15.12.2014

 English version: Physics of the Solid State, 2015, 57:6, 1095–1099

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